Ceramic vessel 024-1. Oppidum Puente Tablas

Ceramic vessel located beside the entrance of the building B of the palatial complex of the Iberian oppidum of Puente Tablas (Jaén, Spain). Oxidising atmosphere. Decoration with black lines. The black color is manufactured using a oxide of manganese identified by MRS as bixbyite/hausmannite (Mn2O3/Mn3O4) and jacobsite (MnFe2O4). Bixbyite/hausmannite are the result of the transformation of pyrolusite when firing temperature is set above 450ºC and below 900ºC. The presence of jacobsite means a temperature reaching the 900ºC.
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Dimensions

: 4.5 Centimeters

: 5.5 Centimeters

Materials

pottery

Temporal

: Iberian, Iberians

: 5th ct. BC.-3rd ct. BC

Otros metadatos

Spatial

  • : Oppidum de Puente Tablas
  • : Puente Tablas (Jaén, Spain)
  • : WGS84
 

Copyrights

Creative Commons - Attribution, Non-Commercial, No Derivatives (BY-NC-ND)

References

Ruiz A. y M. Molinos (coord.) (2015): Jaén, tierra ibera. 40 años de investigación y transferencia. Universidad de Jaén.

Parras, D.; Vandenabeele, P.; Sánchez, A.; Montejo, M.; Moens, L Y Ramos, N. (2010): “Micro-Raman spectroscopy of decorated pottery from the Iberian archaeological site of Puente Tablas (Jaén, Spain, VII-IV century b.C.)”. Journal of Raman Spectroscopy, 41: 68-73.

Tuñón, J.A., Sánchez, A., Parras, D.J., Vandenabeele, P. and Montejo, M. (2016): “Micro-Raman spectroscopy on Iberian archaeological material”. Journal of Raman Spectroscopy. 47: 1514-1521.

Digital Resources

Activities

  • Archaeometric analysis
  • Physical chemical analysis
  • Ceramic. Analysis of decoration

University Research Center for Iberian Archaeology

Raman Microscopy

Mineral analysis of the black decoration

Non destructive. Surface cleaning. Sample pretreatment is not required. Direct measurement.

Micro-Raman Spectroscopy (MRS)

Renishaw ‘in via’ Reflex Spectrometer coupled with a confocal Leica DM LM microscope (CICT, University of Jaén), equipped with a diode laser (785 nm, 300 mW), and a Peltier-cooled CCD detector, calibrated to the 520.5 cm-1 line of silicon.
 

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