Covering 20010. Burial mound 20. Cemetery of Tutugi.

White covering of the second phase of the burial mound 20 of the Iberian cemetery of Tutugi (Galera, Granada, Spain). It is located outside the burial mound and manufactured with dolomite [MgCa(CO3)2] and residual gypsum (CaSO4·2H2O).

New product

Dimensions

: 4 Centimeters

: 3 Centimeters

Materials

covering

Temporal

: Iberians, Iberian

: Late 5th ct. BC

Spatial

: Cemetery of Tutugi

: Galera, Granada, Spain

: WGS84

 

Copyrights

Creative Commons - Attribution, Non-Commercial, No Derivatives (BY-NC-ND)

References

Rodríguez Ariza, Mª O. (2014): La necrópolis ibérica de Tútugi (2000-2012). CAAItextos. Universidad de Jaén, Jaén

Digital Resources

  • Photo of the white covering 20010 Instituto Universitario de Investigación en Arqueología Ibérica

    Creative Commons - Attribution, Non-Commercial, No Derivatives (BY-NC-ND)
    Arquiberlab
    http://creativecommons.org/licenses/by-nc-nd/3.0/
  • Raman spectrum of white decoration. Sample 20010 Instituto Universitario de Investigación en Arqueología Ibérica

    Creative Commons - Attribution, Non-Commercial, No Derivatives (BY-NC-ND)
    Arquiberlab
    http://creativecommons.org/licenses/by-nc-nd/3.0/
  • Photo of the burial mound 20.

    Creative Commons - Attribution, Non-Commercial, No Derivatives (BY-NC-ND)
    Arquiberlab
    http://creativecommons.org/licenses/by-nc-nd/3.0/
  • Draw and phases of the burial mound 20

    Creative Commons - Attribution, Non-Commercial, No Derivatives (BY-NC-ND)
    Arquiberlab
    http://creativecommons.org/licenses/by-nc-nd/3.0/

Activities

Archaeometric analysis

Physical-chemical analysis

Covering

University Research Center for Iberian Archaeology

Spectroscopic analysis

Mineral analysis of the outside white covering

Non destructive. Surface cleaning. Sample pretreatment is not required. Direct measurement.

Micro-raman Spectroscopy (MRS)

Renishaw ‘in via’ Reflex Spectrometer coupled with a confocal Leica DM LM microscope (CICT, University of Jaén), equipped with a diode laser (785 nm, 300 mW), and a Peltier-cooled CCD detector, calibrated to the 520.5 cm-1 line of silicon.

 

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